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01/2005 figure 1: block diagram features ? internal reference voltage ? integrated power control scheme ? ingap hbt technology ? esd protection on all pins (2.5 kv) ? low profile 1.3 mm ? small package outline 7 mm x 7 mm ? egprs capable (class 12) gmsk mode ? integrated power control (cmos) ? +35 dbm gsm850/900 output power ? +33 dbm dcs/pcs output power ? 55 % gsm850/900 pae ? 50 % dcs/pcs pae ? power control range > 50 db edge mode ? +30.5 dbm gsm850/900 output power ? +29.5 dbm dcs/pcs output power ? 25 % gsm850/900 pae ? 25 % dcs/pcs pae applications ? gsm850/gsm900/dcs/pcs handsets ? dual/tri/quad band pda ? gmsk and 8-psk polar modulation schemes product description this power amplifier module supports dual, tri and quad band applications for gmsk and 8-psk modu- lation schemes using a polar architecture. there are two amplifier chains, one to support gsm850/900 bands, the other for dcs/pcs bands. the module includes an internal reference voltage and integrated power control scheme for use in both gmsk and 8-psk operation. this facilitates fast and easy production calibration and reduces the num- ber of external components required to complete a power control function. the amplifier?s power con- trol range is typically 55 db, with the output power set by applying an analog voltage to v ramp . all of the rf ports for this device are internally matched to 50 ? . internal dc blocks are provided at the rf inputs. AWT6168 gsm/gprs/polar edge power amplifier module with integrated power control advanced product information - rev 0.1 gsm850/900_in t x _en dcs/pcs_in gsm850/900_ou t gsm850/900 bias/power control dcs/pcs_out dcs/pcs bs v ramp v batt c ext
2 AWT6168 advanced product information - rev 0.1 01/2005 table 1: pin description figure 2: pinout (x - ray top view) n i p e m a n n o i t p i r c s e d n i p e m a n n o i t p i r c s e d 1n i _ s c p / s c dt u p n i f r s c p / s c d0 1t u o _ m s gt u p t u o f r 0 0 9 / 0 5 8 m s g 2s bt u p n i c i g o l t c e l e s d n a b1 1d n gd n u o r g 3n e _ x tt u p n i c i g o l e l b a n e x t2 1d n gd n u o r g 4v t t a b y l p p u s y r e t t a b n o i t c e n n o c 3 1t u o _ c c v t u p t u o e g a t l o v l o r t n o c d e t c e n n o c e b t s u m h c i h w v o t 2 c c g n i l p u o c e d o n , 5c t x e s s a p y b4 1d n gd n u o r g 6v p m a r o t d e s u l a n g i s g o l a n a r e w o p t u p t u o e h t l o r t n o c 5 1d n gd n u o r g 7n i _ m s gt u p n i f r 0 0 9 / 0 5 8 m s g6 1t u o _ s c p / s c dt u p t u o f r s c p / s c d 8v 2 c c r o f t u p n i l o r t n o c c c v 0 0 9 / 0 5 8 m s g r e i f i l p m a - e r p 7 1d n gd n u o r g 9d n gd n u o r g8 1v 2 c c v c c r o f t u p n i l o r t n o c s c p / s c d r e i f i l p m a - e r p v cc2 dcs/pcs_in bs t _en x v batt v ramp gsm_in dcs/pcs_ou t gsm_out vcc_out 18 1 9 8 7 2 3 4 5 6 10 16 11 13 15 12 14 17 c ext gnd gnd gnd gnd gnd gnd v cc2
3 AWT6168 advanced product information - rev 0.1 01/2005 stresses in excess of the absolute ratings may cause permanent damage. functional operation is not implied under these conditions. exposure to absolute ratings for extended periods of time may adversely affect reliability. electrical characteristics table 2: absolute maximum ratings although protection circuitry has been designed into this device, proper precau- tions should be taken to avoid exposure to electrostatic discharge (esd) during handling and mounting. human body model hbm employed is resistance = 1500 ? ? ? ? ? , capacitance = 100pf. table 3: esd ratings r e t e m a r a p n i m x a m s t i n u ( e g a t l o v y l p p u sv t t a b )-7 +v ( r e w o p t u p n i f rf r n i )-1 1m b d ( e g a t l o v l o r t n o cv p m a r )3 . 0 -8 . 1v ( e r u t a r e p m e t e g a r o t st g t s )5 5 -0 5 1c r e t e m a r a p d o h t e m g n i t a r t i n u ) s t r o p f r ( e g a t l o v d l o h s e r h t d s em b h5 . 2 >v k ) s t u p n i l o r t n o c ( e g a t l o v d l o h s e r h t d s em b h5 . 2 >v k
4 AWT6168 advanced product information - rev 0.1 01/2005 table 5: digital inputs table 6: logic control table r e t e m a r a p l o b m y s n i m p y t x a m s t i n u e g a t l o v h g i h c i g o lv h i 2 . 1- 0 . 3v e g a t l o v w o l c i g o lv l i -- 5 . 0v t n e r r u c h g i h c i g o li | ih |--0 3 a t n e r r u c w o l c i g o li | il |--0 3 a e d o m l a n o i t a r e p o s b n e _ x t 0 0 9 / 0 5 8 m s gw o lh g i h s c p / s c dh g i hh g i h d e l b a s i d a p-w o l table 4: operating conditions the device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. r e t e m a r a p n i m p y t x a m s t i n u s t n e m m o c ( e r u t a r e p m e t e s a ct c )0 2 --5 8c ( e g a t l o v y l p p u sv t t a b )0 . 35 . 38 . 4v t n e r r u c e g a k a e l y l p p u s r e w o p-15 a v t t a b v , v 8 . 4 = p m a r , v 0 = w o l = n e _ x t d e i l p p a f r o n e g n a r e g a t l o v l o r t n o c2 . 0-6 . 1v ( e m i t n o n r u tt n o )--1 s v p m a r w o l = n e _ x t , v 2 . 0 = y h g i h p n i m b d 5 = ( e m i t f f o n r u tt f f o ) --1 s v p m a r w o l = n e _ x t , v 2 . 0 = y h g i h p n i m b d 5 = ( e m i t e s i rt e s i r ) --1 s p t u o m b d 0 1 - = y p x a m ) b d 2 . 0 n i h t i w ( ( e m i t l l a ft l l a f ) --1 s p t u o p = x a m y ) b d 2 . 0 n i h t i w ( m b d 0 1 - v p m a r e c n a t i c a p a c t u p n i-3-f p v p m a r t n e r r u c t u p n i--0 1 a e l c y c y t u d--0 5%
5 AWT6168 advanced product information - rev 0.1 01/2005 table 7: electrical characteristics for gsm850/900 gmsk mode unless otherwise specified: v batt = 3.5 v, p in = 5 dbm, pulse width =1154 s, duty 25%, z in = z out = 50 ? ? ? ? ? , t c = 25 c, v ramp = 1.6 v, bs = low, tx_en = high, mode = low r e t e m a r a p n i m p y t x a m t i n u s t n e m m o c y c n e u q e r f g n i t a r e p o ( f o) 4 2 8 0 8 8 - - 9 4 8 5 1 9 z h m r e w o p t u p n i 358 m b d p , r e w o p t u p t u o x a m 5 . 4 35 3- m b dz h m 5 1 9 o t 4 2 8 = q e r f r e w o p t u p t u o d e d a r g e d0 . 2 35 . 2 3- m b d v t t a b t , v 0 . 3 = c c 5 8 = p n i m b d 3 = p @ e a p x a m -5 5-% z h m 5 1 9 o t 4 2 8 = q e r f 1 n o i t a l o s i d r a w r o f-7 3 -- m b d p , w o l = n e _ x t n i m b d 8 = 2 n o i t a l o s i d r a w r o f - 5 2 -- m b dv , h g i h = n e _ x t p m a r p , v 2 . 0 = n i m b d 8 = n o i t a l o s i s s o r c f 2 ( o ) t r o p s c p / s c d @ -5 2 -- m b dv p m a r v o t v 2 . 0 = x a m _ p m a r c i n o m r a h d n o c e s-0 2 -- m b ds l e v e l r e w o p t u p t u o l l a r e v o c i n o m r a h d r i h t-0 3 -- m b ds l e v e l r e w o p t u p t u o l l a r e v o y t i l i b a t s p , s e s a h p l l a 1 : 8 = r w s v t u o < m b d 5 . 4 3 -- 6 3 -m b df t u o z h g 1 < -- 0 3 -m b df t u o z h g 1 > s s e n d e g g u r1 : 0 1--- s e s a h p d a o l l l a r e w o p e s i o n x r -6 8 -- m b d f x t z h k 0 0 1 = w b r , z h m 9 4 8 = f x r p , z h m 4 9 8 o t 9 6 8 = t u o < m b d 5 . 4 3 -0 8 -- m b d f x t , z h k 0 0 1 = w b r , z h m 5 1 9 = f x r p , z h m 5 3 9 o t 5 2 9 = t u o < m b d 5 . 4 3 -6 8 -- m b d f x t , z h k 0 0 1 = w b r , z h m 5 1 9 = f x r p , z h m 0 6 9 o t 5 3 9 = t u o < m b d 5 . 4 3 s s o l n r u t e r t u p n i--1 : 5 . 2r w s vs l e v e l r e w o p t u p t u o l l a r e v o
6 AWT6168 advanced product information - rev 0.1 01/2005 table 8: electrical characteristics for gsm850/900 edge mode unless otherwise specified: v batt = 3.5 v, p in = 5 dbm, v ramp = 1.6 v, pulse width =1154 s, duty 25% z in = z out = 50 ? ? ? ? ? , t c = 25 c, bs = low, tx_en = high, mode = high r e t e m a r a p n i m p y t x a m t i n u s t n e m m o c y c n e u q e r f g n i t a r e p o ( f o) 4 2 8 0 8 8 - - 9 4 8 5 1 9 z h m m b d 5 . 0 3 @ e a p-5 2-% e g n a r c i m a n y d-5 5- b dv p m a r v 6 . 1 o t v 2 . 0 = e p o l s n i a g--0 0 3v / b dp t u o m b d 5 e s a h p 1 2 s / m p - m a n o i t a i v e d - - - - - - - 9 3 . 2 8 7 . 2 4 3 . 3 9 8 . 2 4 7 . 1 4 8 . 1 9 4 . 2 - - - - - - - b d / g e d m b d 5 < m b d 5 + m b d 0 1 + m b d 5 1 + m b d 0 2 + m b d 5 2 + m b d 0 3 + n o i t a l o s i s s o r c f 2 ( o ) t r o p s c p / s c d @ -5 2 -- m b d c i n o m r a h d n o c e s-0 2 -- m b ds l e v e l r e w o p t u p t u o l l a r e v o c i n o m r a h d r i h t-0 3 -- m b ds l e v e l r e w o p t u p t u o l l a r e v o y t i l i b a t s p , s e s a h p l l a 1 : 8 = r w s v t u o < m b d 5 . 0 3 -- 6 3 -m b df t u o z h g 1 < -- 0 3 -m b df t u o z h g 1 > r e w o p e s i o n x r -6 8 -- m b d f x t z h k 0 0 1 = w b r , z h m 9 4 8 = f x r p , z h m 4 9 8 o t 9 6 8 = t u o < m b d 5 . 0 3 -0 8 -- m b d f x t , z h k 0 0 1 = w b r , z h m 5 1 9 = f x r p , z h m 5 3 9 o t 5 2 9 = t u o < m b d 5 . 0 3 -6 8 -- m b d f x t , z h k 0 0 1 = w b r , z h m 5 1 9 = f x r p , z h m 0 6 9 o t 5 3 9 = t u o < m b d 5 . 0 3 s s o l n r u t e r t u p n i--1 : 5 . 2r w s v
7 AWT6168 advanced product information - rev 0.1 01/2005 table 9: electrical characteristics for dcs/pcs gmsk mode unless otherwise specified: v batt = 3.5 v, p in = 5 dbm, pulse width =1154 s, duty 25%, z in = z out = 50 ? ? ? ? ? , t c = 25 c, v ramp = 1.6 v, bs = high, tx_en = high, mode =low r e t e m a r a p n i m p y t x a m t i n u s t n e m m o c y c n e u q e r f g n i t a r e p o 0 1 7 1 0 5 8 1 - - 5 8 7 1 0 1 9 1 z h m r e w o p t u p n i 358 m b d p , r e w o p t u p t u o x a m 2 33 3- m b d r e w o p t u p t u o d e d a r g e d5 . 9 25 . 0 3- m b d v t t a b t , v 0 . 3 = c c 5 8 = p n i m b d 3 = p @ e a p x a m -0 5- % z h m 0 1 9 1 o t 0 1 7 1 = q e r f 1 n o i t a l o s i d r a w r o f-7 3 -- m b dp , w o l = n e _ x t n i m b d 8 = 2 n o i t a l o s i d r a w r o f-7 1 -- m b d v , h g i h = n e _ x t p m a r , v 2 . 0 = p n i m b d 8 = c i n o m r a h d n o c e s-0 2 -- m b ds l e v e l r e w o p t u p t u o l l a r e v o c i n o m r a h d r i h t-0 3 -- m b ds l e v e l r e w o p t u p t u o l l a r e v o y t i l i b a t s p , s e s a h p l l a 1 : 8 = r w s v t u o < m b d 2 3 -- 6 3 -m b df t u o z h g 1 < -- 0 3 -m b df t u o z h g 1 > s s e n d e g g u r1 : 0 1--- s e s a h p d a o l l l a r e w o p e s i o n x r -0 8 -- m b d f x t , z h k 0 0 1 = w b r , z h m 5 8 7 1 = f x r p , z h m 0 8 8 1 o t 5 0 8 1 = t u o < m b d 2 3 -0 8 -- m b d f x t , z h k 0 0 1 = w b r , z h m 0 1 9 1 = f x r p , z h m 0 9 9 1 o t 0 3 9 1 = t u o < m b d 2 3 s s o l n r u t e r t u p n i--1 : 5 . 2r w s vs l e v e l r e w o p t u p t u o l l a r e v o
8 AWT6168 advanced product information - rev 0.1 01/2005 table 10: electrical characteristics for dcs/pcs edge mode unless otherwise specified: v batt = 3.5 v, p in = 5 dbm, v ramp = 1.6 v, pulse width =1154 s, duty 25%, z in = z out = 50 ? ? ? ? ? , tc = 25 c , bs =high, tx_en = high, mode = high r e t e m a r a p n i m p y t x a m t i n u s t n e m m o c y c n e u q e r f g n i t a r e p o ( f o) 0 1 7 1 0 5 8 1 - - 5 8 7 1 0 1 9 1 z h m m b d 5 . 9 2 @ e a p-5 2- % e g n a r c i m a n y d-0 5- b dv p m a r v 6 . 1 o t v 2 . 0 = e p o l s n i a g--0 0 3v / b dp t u o m b d 0 e s a h p 1 2 s / m p - m a n o i t a i v e d - - - - - - - - 2 9 . 1 5 6 . 1 4 5 . 2 1 3 . 2 6 6 . 1 1 6 . 1 3 0 . 1 2 9 . 0 - - - - - - - - b d / g e d m b d 0 < m b d 0 m b d 5 + m b d 0 1 + m b d 5 1 + m b d 0 2 + m b d 5 2 + m b d 8 2 + c i n o m r a h d n o c e s-0 2 -- m b ds l e v e l r e w o p t u p t u o l l a r e v o c i n o m r a h d r i h t-0 3 -- m b ds l e v e l r e w o p t u p t u o l l a r e v o y t i l i b a t s p , s e s a h p l l a 1 : 8 = r w s v t u o < m b d 5 . 9 2 -- 6 3 -m b df t u o z h g 1 < -- 0 3 -m b df t u o z h g 1 > r e w o p e s i o n x r -0 8 -- m b d f x t z h k 0 0 1 = w b r , z h m 5 8 7 1 = f x r p , z h m 0 8 8 1 o t 5 0 8 1 = t u o < m b d 5 . 9 2 -0 8 -- m b d f x t , z h k 0 0 1 = w b r , z h m 0 1 9 1 = f x r p , z h m 0 9 9 1 o t 0 3 9 1 = t u o < m b d 5 . 9 2 s s o l n r u t e r t u p n i--1 : 5 . 2r w s v
9 AWT6168 advanced product information - rev 0.1 01/2005 application information gsm850/900 rf output gsm850/900 rf input 1 2 3 4 5 6 7 16 15 14 13 12 11 10 89 18 17 dcs/pcs_pin bs tx_en vbat t cext vramp gsm_in vcc2 vcc2 gnd gnd gnd gnd gsm_out vcc_out gnd gnd dcs/pcs_out AWT6168 dcs/pcs rf input band select tx enable dac output dcs/pcs rf output battery voltage 10k * 27pf* * filtering may be required to filter noise from baseband. ** this component should be placed as close to the device pin as possible. ++ these components are recommended as good design practice for improving noise rejection characteristics. the values specified are not critical as they may not be required in the final application. 2.7pf ** 47uf ++ 22nf ** 1nf ++ 1nf ++ 56pf ** figure 3: recommended application circuit
10 AWT6168 advanced product information - rev 0.1 01/2005 package outline figure 3: package outline
11 AWT6168 advanced product information - rev 0.1 01/2005 notes
warning anadigics products are not intended for use in life support appliances, devices or systems. use of an anadigics product in any such application without written consent is prohibited. important notice anadigics, inc. 141 mount bethel road warren, new jersey 07059, u.s.a. tel: +1 (908) 668-5000 fax: +1 (908) 668-5132 url: http://www.anadigics.com e-mail: mktg@anadigics.com anadigics, inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. the product specifications contained in advanced product information sheets and preliminary data sheets are subject to change prior to a product?s formal introduction. information in data sheets have been carefully checked and are assumed to be reliable; however, anadigics assumes no responsibilities for inaccuracies. anadigics strongly urges customers to verify that the information they are using is current before placing orders. 12 AWT6168 advanced product information - rev 0.1 01/2005

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